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SST39WF400A-90-4I-M1QE Datasheet(PDF) 11 Page - Silicon Storage Technology, Inc |
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SST39WF400A-90-4I-M1QE Datasheet(HTML) 11 Page - Silicon Storage Technology, Inc |
11 / 26 page Data Sheet 4 Mbit Multi-Purpose Flash SST39WF400A 11 ©2004 Silicon Storage Technology, Inc. S71220-05-000 6/04 AC CHARACTERISTICS TABLE 12: READ CYCLE TIMING PARAMETERS VDD = 1.70-1.95V FOR 90 NS1 VDD = 1.65-1.95V FOR 100 NS 1. 90 ns parts will ONLY support voltage range 1.70-1.95V. Symbol Parameter SST39WF400A-90 SST39WF400A-100 Units Min Max Min Max TRC Read Cycle Time 90 100 ns TCE Chip Enable Access Time 90 100 ns TAA Address Access Time 90 100 ns TOE Output Enable Access Time 50 50 ns TCLZ2 2. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ2 OE# Low to Active Output 0 0 ns TCHZ2 CE# High to High-Z Output 40 40 ns TOHZ2 OE# High to High-Z Output 40 40 ns TOH2 Output Hold from Address Change 0 0 ns T12.2 1220 TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS Symbol Parameter Min Max Units TBP Word-Program Time 40 µs TAS Address Setup Time 0 ns TAH Address Hold Time 50 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 50 ns TWP WE# Pulse Width 50 ns TWPH1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. WE# Pulse Width High 30 ns TCPH1 CE# Pulse Width High 30 ns TDS Data Setup Time 50 ns TDH1 Data Hold Time 0 ns TIDA1 Software ID Access and Exit Time 150 ns TSE Sector-Erase 50 ms TBE Block-Erase 50 ms TSCE Chip-Erase 200 ms T13.0 1220 |
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