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STV160NF03L Datasheet(PDF) 1 Page - STMicroelectronics |
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STV160NF03L Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 November 2002 STV160NF03L N-CHANNEL 30V - 0.0019 Ω - 160A PowerSO-10 STripFET™ POWER MOSFET (1) Starting Tj=25°C , ID =80A, VDD =20V (**)Limited only maximum junction temperature allowed by PowerSO-10 s TYPICAL RDS(on) = 0.0019 Ω s LOW THRESHOLD DRIVE s ULTRA LOW ON-RESISTANCE s ULTRA FAST SWITCHING s 100% AVALANCHE TESTED s VERY LOW GATE CHARGE s LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE DESCRIPTION The STV160NF03L represents the second gener- ation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also trans- lates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DC- DC CONVERTERS ABSOLUTE MAXIMUM RATINGS (q) Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STV160NF03L 30 V < 0.0028 Ω 160 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 30 V VDGR Drain-gate Voltage (RGS =20kΩ) 30 V VGS Gate- source Voltage ± 15 V ID(**) Drain Current (continuos) at TC = 25°C 160 A ID Drain Current (continuos) at TC = 100°C 113 A IDM ( ) Drain Current (pulsed) 640 A PTOT Total Dissipation at TC = 25°C 210 W Derating Factor 1.4 W/°C EAS (1) Single Pulse Avalanche Energy 1 J Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C PowerSO-10 1 10 INTERNAL SCHEMATIC DIAGRAM CONNECTION DIAGRAM (TOP VIEW) |
Similar Part No. - STV160NF03L_02 |
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Similar Description - STV160NF03L_02 |
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