TAS5112A

SLES094A - OCTOBER 2003 - REVISED MARCH 2004

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2

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during

storage or handling to prevent electrostatic damage to the MOS gates.

GENERAL INFORMATION

Terminal Assignment

The TAS5112A is offered in a thermally enhanced 56-pin

TSSOP DFD (thermal pad is on the top), shown as follows.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

56

55

54

53

52

51

50

49

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

GND

GND

GREG

OTW

SD_CD

SD_AB

PWM_DP

PWM_DM

RESET_CD

PWM_CM

PWM_CP

DREG_RTN

M3

M2

M1

DREG

PWM_BP

PWM_BM

RESET_AB

PWM_AM

PWM_AP

GND

DGND

GND

DVDD

GREG

GND

GND

GND

GVDD

BST_D

PVDD_D

PVDD_D

OUT_D

OUT_D

GND

GND

OUT_C

OUT_C

PVDD_C

PVDD_C

BST_C

BST_B

PVDD_B

PVDD_B

OUT_B

OUT_B

GND

GND

OUT_A

OUT_A

PVDD_A

PVDD_A

BST_A

GVDD

GND

DFD PACKAGE

(TOP VIEW)

Absolute Maximum Ratings

over operating free-air temperature range unless otherwise noted(1)

TAS5112A

UNITS

DVDD TO DGND

–0.3 V to 4.2 V

GVDD TO GND

33.5 V

PVDD_X TO GND (dc voltage)

33.5 V

PVDD_X TO GND (spike voltage(2))

48 V

OUT_X TO GND (dc voltage)

33.5 V

OUT_X TO GND (spike voltage(2))

48 V

BST_X TO GND (dc voltage)

48 V

BST_X TO GND (spike voltage(2))

53 V

GREG TO GND (3)

14.2 V

PWM_XP, RESET, M1, M2, M3, SD,

OTW

–0.3 V to DVDD + 0.3 V

Maximum operating junction

temperature, TJ

–40

°C to 150°C

Storage temperature

–40

°C to 125°C

(1) Stresses beyond those listed under “absolute maximum ratings”

may cause permanent damage to the device. These are stress

ratings only, and functional operation of the device at these or any

other conditions beyond those indicated under “recommended

operating conditions” is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device

reliability.

(2) The duration of voltage spike should be less than 100 ns; see

application note SLEA025.

(3) GREG is treated as an input when the GREG pin is overdriven by

GVDD of 12 V.

Package Dissipation Ratings

PACKAGE

RθJC

(

°C/W)

RθJA

(

°C/W)

56-pin DFD TSSOP

1.14

See Note 4

(4) The TAS5112A package is thermally enhanced for conductive

cooling using an exposed metal pad area. It is impractical to use the

device with the pad exposed to ambient air as the only heat sinking

of the device.

For this reason, RθJA, a system parameter that characterizes the

thermal treatment, is provided in the Application Information section

of the data sheet. An example and discussion of typical system

RθJA values are provided in the Thermal Information section. This

example provides additional information regarding the power

dissipation ratings. This example should be used as a reference to

calculate the heat dissipation ratings for a specific application. TI

application engineering provides technical support to design

heatsinks if needed.

Ordering Information

TA

PACKAGE

DESCRIPTION

0

°C to 70°C

TAS5112ADFD

56-pin small TSSOP

For

the

most

current

specification

and

package

information, refer to our Web site at www.ti.com.