Electronic Components Datasheet Search
 ALLDATASHEET.COM Part #DescriptionMarking X

## 1N5822 Datasheet(HTML) 4 Page - ON Semiconductor

 4 / 8 page1N5820, 1N5821, 1N5822http://onsemi.com4NOTE 3 — DETERMINING MAXIMUM RATINGSReverse power dissipation and the possibility of thermalrunaway must be considered when operating this rectifier atreverse voltages above 0.1 VRWM. Proper derating may beaccomplished by use of equation (1).TA(max) = TJ(max) * RqJAPF(AV) * RqJAPR(AV)(1)where TA(max) = Maximum allowable ambient temperatureTJ(max) = Maximum allowable junction temperature(125°C or the temperature at which thermalrunaway occurs, whichever is lowest)PF(AV) = Average forward power dissipationPR(AV) = Average reverse power dissipationRqJA = Junction−to−ambient thermal resistanceFigures 1, 2, and 3 permit easier use of equation (1) bytaking reverse power dissipation and thermal runaway intoconsideration. The figures solve for a reference temperatureas determined by equation (2).TR = TJ(max) * RqJAPR(AV)(2)Substituting equation (2) into equation (1) yields:TA(max) = TR * RqJAPF(AV)(3)Inspection of equations (2) and (3) reveals that TR is theambient temperature at which thermal runaway occurs orwhere TJ = 125°C, when forward power is zero. Thetransition from one boundary condition to the other isevident on the curves of Figures 1, 2, and 3 as a differencein the rate of change of the slope in the vicinity of 115°C. Thedata of Figures 1, 2, and 3 is based upon dc conditions. Foruse in common rectifier circuits, Table 1 indicates suggestedfactors for an equivalent dc voltage to use for conservativedesign, that is:VR(equiv) = V(FM)F(4)The factor F is derived by considering the properties of thevarious rectifier circuits and the reverse characteristics ofSchottky diodes.EXAMPLE: Find TA(max) for 1N5821 operated in a12−volt dc supply using a bridge circuit with capacitive filtersuch that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, InputVoltage = 10 V(rms), RqJA = 40°C/W.Step 1. Find VR(equiv). Read F = 0.65 from Table 1,NVR(equiv) = (1.41) (10) (0.65) = 9.2 V.Step 2. Find TR from Figure 2. Read TR = 108°C@ VR = 9.2 V and RqJA = 40°C/W.Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W@I(FM)I(AV)+ 10 and IF(AV) + 1.0 A.Step 4. Find TA(max) from equation (3).TA(max) = 108 * (0.85) (40) = 74°C.**Values given are for the 1N5821. Power is slightly lowerfor the 1N5820 because of its lower forward voltage, andhigher for the 1N5822. Variations will be similar for theMBR−prefix devices, using PF(AV) from Figure 6.Table 1. Values for Factor FCircuitHalf WaveFull Wave, BridgeFull Wave,Center Tapped*†LoadResistiveCapacitive*ResistiveCapacitiveResistiveCapacitiveSine Wave0.51.30.50.651.01.3Square Wave0.751.50.750.751.51.5*Note that VR(PK) [ 2.0 Vin(PK).†Use line to center tap voltage for Vin.

## Similar Part No. - 1N5822

 Manufacturer Part # Datasheet Description Won-Top Electronics 1N5822 45Kb / 4P 3.0A SCHOTTKY BARRIER DIODE Micro Commercial Compon... 1N5822 493Kb / 4P 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Motorola, Inc 1N5822 168Kb / 6P SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS New Jersey Semi-Conduct... 1N5822 128Kb / 1P SCHOTTKY BARRIER RECTIFIERS TAITRON Components Inco... 1N5822 179Kb / 4P 3A Schottky Barrier Rectifiers
More results

## Similar Description - 1N5822

 Manufacturer Part # Datasheet Description Motorola, Inc MBR150 95Kb / 4P Axial Lead Rectifiers ON Semiconductor MBR835 138Kb / 4P Axial Lead Rectifiers September, 2006 ??Rev. 2 MBR350 59Kb / 4P Axial Lead Rectifiers June, 2006 ??Rev. 6 1N5817 75Kb / 7P Axial Lead Rectifiers July, 2006 ??Rev. 10 MBR150 67Kb / 5P Axial Lead Rectifiers June, 2006 ??Rev. 8 New Jersey Semi-Conduct... MBR115P 133Kb / 2P AXIAL LEAD RECTIFIERS ON Semiconductor MBR350 57Kb / 4P Axial Lead Rectifiers December, 2004 ??Rev. 4 Weitron Technology SR320 637Kb / 3P Axial Lead Schottky Rectifiers SiPower Inc. SPSL20200 398Kb / 3P Axial Lead Schottky Rectifiers SPSL15200 396Kb / 3P Axial Lead Schottky Rectifiers
More results