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STP80NF12 Datasheet(PDF) 5 Page - STMicroelectronics

Part No. STP80NF12
Description  N-channel 120V - 0.013ohm - 80A - TO-220 STripFET TM II Power MOSFET
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STP80NF12 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STP80NF12
Electrical characteristics
5/12
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
80
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
320
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=80A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A,
di/dt = 100A/µs,
VDD=35V, TJ = 150°C
155
0.85
11
ns
µC
A


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