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A8434 Datasheet(PDF) 4 Page - Allegro MicroSystems

Part No. A8434
Description  6-Channel High Efficiency Charge Pump White LED Driver
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Maker  ALLEGRO [Allegro MicroSystems]
Homepage  http://www.allegromicro.com
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A8434 Datasheet(HTML) 4 Page - Allegro MicroSystems

 
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6-Channel High Efficiency Charge Pump
White LED Driver
A8434
4
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
ELECTRICAL CHARACTERISTICSa
VIN = ENM = ENS = 3.6 V, C1 = C2 = 1 μF, CIN = COUT= 1 μF, RSET= 6.49 kΩ,
TA=–40°C to +85°C; typical values are at TA=25°C; unless otherwise noted
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Voltage Range
VIN
2.7
5.5
V
Undervoltage Lockout Threshold
VUVLO
VIN falling
2.25
2.45
2.60
V
UVLO Hysteresis Window
VUVLOHYS
–60
mV
Quiescent Current
IQ
Switching in 1.5× or 2.0× mode; TA = 25°C
6
mA
ENS = ENM = GND; TA = 25°C
0.1
2
μA
Soft-start Completion Time
tss
0.4
ms
ISET Bias Voltage
VISETBIAS
0.6
V
ISET Leakage in Shutdown
VISETLKG
0.01
1
μA
ISET Current Range
ISET
40
140
μA
ISET to LEDx Current Ratio for LED1 through LED6
ILEDx/IISET 100% setting, ISET=60 μA
220
A/A
ILED Accuracy for LED1 through LED6b
EILEDERR
ENS = ENM = VIN
±1.6
%
LED Current Matching for LED1 through LED4c
ΔILED14
ENS = GND, ENM = VIN
±0.5
%
LED Current Matching for LED5 and LED6c
ΔILED56
ENS = VIN, ENM = GND
±0.5
%
Regulation Voltage at LEDx (1.5× and 2× modes)
VREG
ENS = ENM = VIN
250
mV
1× mode to 1.5× or 1.5× to 2× mode transition voltage at LEDx
Vtrans
VLEDx falling
150
mV
Transition–Dropout Deltad
ΔVdr
Measured as Vtrans – Vdropout
–40
mV
Open Loop Output Resistancee
ROUT
1× mode (VIN – VOUT)/IOUT
–1
Ω
1.5× mode (1.5 × VIN – VOUT)/IOUT
2.5
Ω
2× mode (2 × VIN – VOUT)/IOUT
–5
Ω
LED Leakage in Shutdown
VLEDLKG
ENS = ENM = GND, VIN=5.5 V
0.01
1
μA
Oscillator Frequency
fosc
1
MHz
Output Overvoltage Protection (guaranteed by design)
Vovp
Open circuit at any LED that is programmed
to be in the ON state
6.0
V
ENS and ENM Input High Threshold
VIH
Input high logic threshold
1.4
V
ENS and ENM Input Low Threshold
VIL
Input low logic threshold
0.4
V
Input High Current
IIH
VIH=VIN
1
μA
Input Low Current
IIL
VIL= GND
1
μA
ENM and ENS Pulse Low Time (figure 5)
tLO
0.5
250
μs
ENM and ENS Pulse High Time (figure 5)
tHI
0.5
μs
ENM and ENS Initial Pulse High Time (figure 5)
tINIHI
First ENM or ENS pulse after shutdown
50
μs
Shutdown or Dimming Reset Delay
tSHDN
Falling edge of ENS and/or ENM
0.5
ms
Thermal Shutdown Threshold
TTSD
20oC hysteresis
165
oC
aSpecifications for the range TA = –40°C to 85°C are guaranteed by design.
bILED accuracy is defined as (ISET×220–ILEDAVG)/(ISET×220).
cLED current matching is defined as (ILEDx – ILEDAVG)/ILEDAVG.
dDropout voltage Vdropout is defined as LEDx-to-GND voltage at which ILEDx drops 10% below the value of ILEDx when VLEDx = 300 mV.
eThe open loop output resistance, ROUT, for 1.5× mode is measured when one of the LEDx pins is tied to ground or open (thus its
voltage is always less than 80 mV).


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