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2STR1230 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. 2STR1230
Description  Low voltage fast-switching NPN power transistor
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2STR1230 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
2STR1230
4/10
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (2) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = 30V
0.1
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = 4V
0.1
µA
V(BR)CBO
Collector-emitter
breakdown voltage
(IE = 0)
IC = 100µA
30
V
V(BR)CEO (2)
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10mA
30
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 100µA
5V
VCE(sat) (2) Collector-emitter
saturation voltage
IC = 0.1A
IB = 1mA
IC = 1A
IB = 100mA
IC = 2A
IB = 200mA
0.25
0.4
0.15
0.5
0.85
V
V
V
VBE(sat) (2)
Base-emitter saturation
voltage
IC = 1A
IB = 100mA
0.9
1.25
V
hFE (2)
DC current gain
IC = 50mA
VCE = 2V
IC = 0.5A
VCE = 2V
IC = 1A
VCE = 2V
IC = 2A
VCE = 2V
210
180
130
80
280
560
CCBO
Collector-base
capacitance
IE = 0
VCB = 10V
f = 1MHz
3pF
ton
toff
Resistive load
Turn-on time
Turn-off time
IC = 1.5A
VCC = 10V
IB1 = -IB2 = 150mA
70
380
ns
ns


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