K8D1716UTB-TI07 datasheet(4/40 Pages) SAMSUNG

Part #	K8D1716UTB-TI07

Description	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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FLASH MEMORY

K8D1716UTB / K8D1716UBB

Revision 0.0

July 2004

4

ORDERING INFORMATION

K 8 D 17 1 6 U T B - T I 0 7

Samsung

NOR Flash Memory

Device Type

Dual Bank Boot Block

Operating Temperature Range

C = Commercial Temp. (0

°C to 70 °C)

I = Industrial Temp. (-40

°C to 85 °C)

Block Architecture

T = Top Boot Block

B = Bottom Boot Block

Version

B = 3rd Generation

Access Time

07 = 70 ns

08 = 80 ns

09 = 90 ns

Operating Voltage Range

2.7V to 3.6V

Package

Y = 48 TSOP1

Organization

x16

Table 1. PRODUCT LINE-UP

Part No.

- 7

-8

-9

Vcc

2.7V~3.6V

Max. Address Access Time (ns)

70ns

80ns

90ns

Max. CE Access Time (ns)

70ns

80ns

90ns

Max. OE Access Time (ns)

25ns

35ns

Table 2. K8D1716U DEVICE BANK DIVISIONS

Device

Part Number

Bank 1

Bank 2

Mbit

Block Sizes

Mbit

Block Sizes

K8D1716U

8 Mbit

Eight 8 Kbyte/4 Kword,

fifteen 64 Kbyte/32 Kword

8 Mbit

Sixteen

64 Kbyte/32 Kword

Bank Division

17 = 8Mbits + 8Mbits

Similar Part No. - K8D1716UTB-TI07

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K8D1716UTC	1Mb / 41P	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
	K8D1716UTC-DC07	1Mb / 41P	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
	K8D1716UTC-DC08	1Mb / 41P	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
	K8D1716UTC-DC09	1Mb / 41P	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
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Similar Description - K8D1716UTB-TI07

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K8D1716UTC	1Mb / 41P	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
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K8D1716UTB-TI07 Datasheet(PDF) 4 Page - Samsung semiconductor

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Similar Part No. - K8D1716UTB-TI07

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