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2STW1695 Datasheet(PDF) 3 Page - STMicroelectronics

Part # 2STW1695
Description  High power PNP epitaxial planar bipolar transistor
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2STW1695 Datasheet(HTML) 3 Page - STMicroelectronics

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2STW1695
Electrical characteristics
3/9
1
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3.
Electrical characteristics
Note: 1 Pulsed duration = 300
µs, duty cycle ≤1.5%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = -140V
-0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = -6V
-0.1
µA
V(BR)CEO(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = -50mA
-140
V
V(BR)CBO
Collector-emitter breakdown
voltage (IE = 0)
IC = -100µA
-140
V
V(BR)EBO(1)
Collector-emitter breakdown
voltage (IC = 0)
IE = -1mA
-6
V
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = -5A
IB = -500mA
IC = -7A
IB = -700mA
-0.5
-0.7
V
V
VBE (1)
Base-emitter voltage
VCE = -5V
IC = -5A
-1.3
V
hFE
DC current gain
IC = -3A
VCE = -4V
IC = -5A
VCE = -4V
70
50
140
fT
Transition frequency
IC = -0.5A
VCE = -12V
20
MHz
CCBO
Collector-base capacitance
IE = 0 VCB = -10V f = 1MHz
225
pF
ton
tstg
toff
Resistive load
Turn-on time
Storage time
Fall time
IC = -5A
VCC = -60V
IB1 = -IB2 = -0.5A
0.24
1.2
0.24
µs
µs
µs


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