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2STW1695 Datasheet(PDF) 3 Page - STMicroelectronics |
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2STW1695 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page 2STW1695 Electrical characteristics 3/9 1 Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 3. Electrical characteristics Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5% Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = -140V -0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = -6V -0.1 µA V(BR)CEO(1) Collector-emitter breakdown voltage (IB = 0) IC = -50mA -140 V V(BR)CBO Collector-emitter breakdown voltage (IE = 0) IC = -100µA -140 V V(BR)EBO(1) Collector-emitter breakdown voltage (IC = 0) IE = -1mA -6 V VCE(sat) (1) Collector-emitter saturation voltage IC = -5A IB = -500mA IC = -7A IB = -700mA -0.5 -0.7 V V VBE (1) Base-emitter voltage VCE = -5V IC = -5A -1.3 V hFE DC current gain IC = -3A VCE = -4V IC = -5A VCE = -4V 70 50 140 fT Transition frequency IC = -0.5A VCE = -12V 20 MHz CCBO Collector-base capacitance IE = 0 VCB = -10V f = 1MHz 225 pF ton tstg toff Resistive load Turn-on time Storage time Fall time IC = -5A VCC = -60V IB1 = -IB2 = -0.5A 0.24 1.2 0.24 µs µs µs |
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