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TSC2101 Datasheet(PDF) 39 Page - Texas Instruments |
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TSC2101 Datasheet(HTML) 39 Page - Texas Instruments |
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39 / 93 page  TSC2101 SLAS392D− JUNE 2003 − REVISED MAY 2005 www.ti.com 39 Temperature Measurement In some applications, such as battery charging, a measurement of ambient temperature is required. The temperature measurement technique used in the TSC2101 relies on the characteristics of a semiconductor junction operating at a fixed current level. The forward diode voltage (VBE) has a well-defined characteristic versus temperature. The ambient temperature can be predicted in applications by knowing the 25°C value of the VBE voltage and then monitoring the variation of that voltage as the temperature changes. The TSC2101 offers two modes of temperature measurement. The first mode requires a single reading to predict the ambient temperature. A diode, as shown in Figure 29, is used during this measurement cycle. This voltage is typically 600 mV at +25°C with a 20-µA current through it. The absolute value of this diode voltage can vary a few millivolts. The temperature coefficient of this voltage is typically 2 mV/°C. During the final test of the end product, the diode voltage at a known room temperature should be stored in nonvolatile memory. Further calibration can be done to calculate the precise temperature coefficient of the particular. This method has a temperature resolution of approximately 0.3°C/LSB and accuracy of approximately ±2°C with two-temperature calibration. Figure 30 and Figure 31 shows typical plots with single and two-temperature calibration respectively. TEMP0 TEMP1 Temperature Select X+ MUX A/D Converter Figure 29. Functional Block Diagram of Temperature Measurement Mode −10 −8 −6 −4 −2 0 2 4 6 8 10 −40 −20 0 20 40 60 80 100 TA − Free-Air Temperature − 5C Figure 30. Typical Plot of Single Measurement Method After Calibrating for Offset at Room Temperature |
Similar Part No. - TSC2101_07 |
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Similar Description - TSC2101_07 |
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