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TLP181 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP181
Description  GaAs Ired and Photo−Transistor
Download  9 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP181 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TLP181
2002-09-25
3
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current detating
∆IF / °C
-0.7 (Ta ≥ 53°C)
mA / °C
Pulse forward current
(100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector
-emitter voltage
VCEO
80
V
Emitter
-collector valtage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation
(1 Circuit)
PC
150
mW
Collector power dissipation
derating (1 Circuit Ta ≥ 25°C)
∆PC / °C
-1.5
mW / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation
PT
200
mW
Total package power dissipation
derating (Ta ≥ 25°C)
∆PT / °C
-2.0
mW / °C
Isolation voltage
(AC, 1min., R.H. ≤ 60%)
(Note 1)
BVS
3750
Vrms
(Note 1) Device considered a two
-terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
5
48
V
Forward current
IF
16
20
mA
Collector current
IC
1
10
mA
Operating temperature
Topr
-25
85
°C


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