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TLP181 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part No. TLP181
Description  GaAs Ired and Photo−Transistor
Download  9 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP181 Datasheet(HTML) 4 Page - Toshiba Semiconductor

   
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TLP181
2002-09-25
4
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
µA
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Collector
-emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
80
V
Emitter
-collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
V
VCE = 48 V, ( Ambient light
below 1000 lx)
0.01
(2)
0.1
(10)
µA
Collector dark current
ICEO
VCE = 48 V, Ta = 85°C, ( Ambient
light below 1000 lx)
2
(4)
50
(50)
µA
Capacitance
(collector to emitter)
CCE
V = 0, f = 1 MHz
10
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
50
600
Current transfer ratio
IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
100
600
%
60
Saturated CTR
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
30
%
IC = 2.4 mA, IF = 8 mA
0.4
0.2
Collector
-emitter
saturation voltage
VCE (sat)
IC = 0.2 mA, IF = 1 mA
Rank GB
0.4
V
Off
-state collector current
IC (off)
VF = 0.7V, VCE = 48 V
1
10
µA
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance
(input to output)
CS
VS = 0V, f = 1 MHz
0.8
pF
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60%
1×10
12
10
14
AC, 1 minute
3750
AC, 1 second, in oil
10000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
10000
Vdc


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