2N6111_03 datasheet(2/4 Pages) STMICROELECTRONICS

Part #	2N6111

Description	SILICON PNP SWITCHING TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

70

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = - 1.5V)

VCE = -40 V

VCE = -30 V

TC = 150

oC

-0.1

-2

mA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = -20 V

-1

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-1

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -0.1 A

-30

V

VCER(sus)

∗ Collector-Emitter

Sustaining Voltage

(IC = 0)

IC = -0.1 A

RBE = 100

Ω

-40

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -2 A

IB = -0.2 A

IC = -7 A

IB = -3.0 A

-1

-3.5

V

VBE(on)

∗ Base-Emitter Voltage

IC = -2 A

VCE = -4 V

IC = -7 A

VCE = -4 V

-5

-3

V

hFE

∗

DC Current Gain

IC = -3 A

VCE = -4 V

IC = -7 A

VCE = -4 V

30

2.3

150

hfe

Small Signal Current

Gain

IC = -0.5 A

VCE = -4 V

f = 50 KHz

20

fT

Transition-Frequency

IC = -0.5 A

VCE = -4 V

4

MHz

Ccbo

Collector-base

Capacitance

VCB = -10 V

f = 1 MHz

250

pF

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2N6111

2/4

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