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2N6059 Datasheet(PDF) 1 Page - STMicroelectronics |
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2N6059 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR s STMicrolectronics PREFERRED SALESTYPE s HIGH GAIN s NPN DARLINGTON s HIGH CURRENT s HIGH DISSIPATION s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications. INTERNAL SCHEMATIC DIAGRAM February 2003 1 2 TO-3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 100 V VCEX Collector-Emitter Voltage (VBE = -1.5V) 100 V VCEO Collector-Emitter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 12 A ICM Collector Peak Current (tp < 5 ms) 20 A IB Base Current 0.2 A Ptot Total Dissipation at Tc ≤ 25 oC 150 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC R1 Typ. = 6 K Ω R2 Typ. = 55 Ω ® 1/4 |
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