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2N6036 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N6036
Description  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N6036 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.12
83.3
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
Current (VBE = -1.5V)
VCE = rated VCEO
VCE = rated VCEO
Tc = 125
o C
0.1
0.5
mA
mA
ICBO
Collector Cut-off
Current (IE = 0)
VCE = rated VCBO
0.1
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = rated VCEO
0.1
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
2
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 100 mA
80
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 2 A
IB = 8 mA
IC = 4 A
IB = 40 mA
2
3
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 4 A
IB = 40 mA
4
V
VBE
Base-Emitter Voltage
IC = 2 A
VCE = 3 V
2.8
V
hFE
DC Current Gain
IC = 0.5 A
VCE = 3 V
IC = 2 A
VCE = 3 V
IC = 4 A
VCE = 3 V
500
750
100
15000
hfe
Small Signal Current
Gain
IC = 0.75 A
VCE = 10 V
f = 1KHz
25
CCBO
Collector Base
Capacitance
IE = 0
VCB = 10 V
f = 1MHz
for NPN types
for PNP types
100
200
pF
pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Derating Curve
2N6036/2N6039
2/6


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