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SST32HF32A1 Datasheet(PDF) 12 Page - Silicon Storage Technology, Inc |
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SST32HF32A1 Datasheet(HTML) 12 Page - Silicon Storage Technology, Inc |
12 / 35 page 12 Preliminary Specifications Multi-Purpose Flash Plus + PSRAM ComboMemory SST32HF32A1 ©2005 Silicon Storage Technology, Inc. S71260-01-000 5/05 TABLE 6: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V) Symbol Parameter Limits Test Conditions Min Max Units IDD Active VDD Current Address input = VILT/VIHT, at f=5 MHz, VDD=VDD Max, all DQs open Read OE#=VIL, WE#=VIH Flash 18 mA BEF#=VIL, BES1#=VIH, or BES2=VIL PSRAM 30 mA BEF#=VIH, BES1#=VIL , BES2=VIH Concurrent Operation 40 mA BEF#=VIH, BES1#=VIL , BES2=VIH Write1 WE#=VIL Flash 35 mA BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH PSRAM 30 mA BEF#=VIH, BES1#=VIL , BES2=VIH ISB Standby VDD Current 110 µA VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC IRT Reset VDD Current 30 µA Reset=VSS±0.3V ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max VIH Input High Voltage 0.7 VDD VVDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max VOLF Flash Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOHF Flash Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min VOLS PSRAM Output Low Voltage 0.4 V IOL =1 mA, VDD=VDD Min VOHS PSRAM Output High Voltage 2.2 V IOH =-500 µA, VDD=VDD Min T6.1 1260 1. IDD active while Erase or Program is in progress. TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T7.0 1260 TABLE 8: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 12 pF T8.0 1260 TABLE 9: FLASH RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T9.0 1260 |
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