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SST13LP02 Datasheet(PDF) 6 Page - Silicon Storage Technology, Inc

Part No. SST13LP02
Description  2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
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Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST13LP02 Datasheet(HTML) 6 Page - Silicon Storage Technology, Inc

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Preliminary Specifications
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
©2006 SST Communications Corp.
S71304-01-000
9/06
6
For 802.11b/g Operation
TABLE
2: DC Electrical Characteristics
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
VCC
Supply Voltage
3.0
3.3
3.6
V
ICC
Supply Current
for 802.11g, 22 dBm
220
mA
for 802.11b, 21.5 dBm
205
mA
ICQ
Idle current for 802.11g to meet EVM<4% @ 18 dBm
55
mA
IOFF
Shut down current
0.1
µA
VREG
Reference Voltage with drop resistors
2.9
V
T2.1 1304
TABLE
3: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
Typ
Max.
Unit
FL-U
Frequency range
2400
2485
MHz
G
Small signal gain
25
dB
GVAR1
Gain variation over band (2400-2485 MHz)
±0.5
dB
GVAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Output power level meet 11b spectrum mask
21
dBm
Output power level meet 11g OFDM 54 Mbps spectrum
mask
21
dBm
Added EVM
Added EVM @ Pout = 19 dBm with (54 Mbps 11g OFDM)
4
%
2f
2nd Harmonics at Pout=18 dBm (54 Mbps 11g OFDM)
-45
dBc
3f
3rd Harmonics at Pout=18 dBm (54 Mbps 11g OFDM)
-50
dBc
ACPR1
Adjacent Channel Power Rejection at Pout=18 dBm
(54 Mbps 11g OFDM)
-35
dBc
ACPR2
Alt. Adjacent Channel Power Rejection at Pout=18 dBm
(54 Mbps 11g OFDM)
-45
dBc
T3.1 1304


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