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SST13LP01 Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc

Part No. SST13LP01
Description  2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
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Maker  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
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SST13LP01 Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc

 
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©2005 SST Communications Corp.
S71287-00-000
11/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
High Gain:
– Typically 28 dB gain across 2.4-2.5 GHz over
temperature 0°C to +85°C
– Typically 30-33 dB gain across 4.9-5.8 GHz over
temperature 0°C to +85°C
High linear output power:
– >29 dBm P1dB across 2.4-2.5 GHz
(Exceeding maximum rating of average output
power, never measure with CW source! Pulsed
single-tone source with <50% duty cycle is rec-
ommended.)
– Meets 802.11g OFDM ACPR requirement up to
23 dBm
– Added EVM~4% up to 21 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 23 dBm
– ~28 dBm P1dB (Pulsed single-tone signal)
across 4.9~5.8 GHz
– Meets 802.11a OFDM ACPR requirement up to
22 dBm over whole band
– Added EVM~4% up to 20 dBm for
54 Mbps 802.11a signal
High power-added efficiency/Low operating
current for both 802.11a/b/g applications
– ~24%/250 mA @ POUT = 23 dBm for 802.11g
– ~23%/260 mA @ POUT = 23 dBm for 802.11b
– ~9.5%/320 mA @ POUT = 20 dBm for 802.11a
Built-in Ultra-low IREF power-up/down control
–IREF <3 mA
Low idle current
–~70 mA ICQ (802.11b/g)
– ~170 mA ICQ (802.11a)
High-speed power-up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
across 2.4~2.5 GHz
– ~3.5/1.5 dB gain/max linear power variation
between 0°C to +85°C across 4.9~5.8 GHz
– ~1 dB detector variation over 0°C to +85°C
Low shut-down current (< 0.1 µA)
On-chip power detection
20 dB dynamic range on-chip power detection
Simple input/output matching
Packages available
– 24-contact WQFN (4mm x 4mm)
– Non-Pb (lead-free) packages available
APPLICATIONS:
WLAN (IEEE 802.11a/g/b)
Japanese WLAN
HyperLAN2
Multimedia
•Home RF
Cordless phones
PRODUCT DESCRIPTION
The SST13LP01 is a high-gain, high-performance, dual-
band power amplifier IC based on the highly-reliable
InGaP/GaAs HBT technology.
The SST13LP01 device can be easily configured for high-
power applications with superb power-added efficiency
while operating over the 802.11a/b/g frequency band for
U.S., European, and Japanese markets (2.4-2.5 GHz and
4.9-5.8 GHz.
The SST13LP01 has excellent linearity, typically ~4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 23 dBm and 802.11b spectrum mask at 23
dBm. For 802.11a operation, the SST13LP01 has demon-
strated typically ~4% added EVM at 20 dBm output power
while meeting 802.11a spectrum mask at 22 dBm. The
SST13LP01 also has wide-range (>20 dB), temperature-
stable (~1 dB over 85°C), single-ended/differential power
detectors which lower users’ cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control.
Ultra-low reference current (total IREF <3 mA) makes the
SST13LP01 controllable by an on/off switching signal
directly from the baseband chip. These features, coupled
with low operating current, make the SST13LP01 ideal
for the final stage power amplification in both battery-
powered 802.11a/b/g WLAN transmitter and access
point applications.
The SST13LP01 is offered in a 24-contact WQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP01
SST13LP012.4 GHz / 5 GHz Dual-Band Power Amplifier


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