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SST12LP14 Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc

Part No. SST12LP14
Description  2.4 GHz Power Amplifier
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Maker  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST12LP14 Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc

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©2005 SST Communications Corp.
S71279-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
High Gain:
– Typically 30 dB gain across 2.4~2.5 GHz over
temperature 0°C to +80°C
High linear output power:
– >26.5 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to
23 dBm
– Added EVM ~4% up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
–~22% @ POUT = 22 dBm for 802.11g
–~26% @ POUT = 23.5 dBm for 802.11b
Built-in Ultra-low IREF power-up/down control
–IREF <4 mA
Low idle current
–~60 mA ICQ
High-speed power-up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
High temperature stability
– ~1 dB gain/power variation between 0°C to +80°C
– ~1 dB detector variation over 0°C to +80°C
Low shut-down current (< 0.1 µA)
On-chip power detection
25 dB dynamic range on-chip power detection
Simple input/output matching
Packages available
– 16-contact VQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
APPLICATIONS:
WLAN (IEEE 802.11g/b)
•Home RF
Cordless phones
2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP14 is a high-performance power amplifier IC
based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the 2.4~2.5 GHz frequency
band. It typically provides 30 dB gain with 22% power-
added efficiency @ POUT = 22 dBm for 802.11g and 27%
power-added efficiency @ POUT = 24 dBm for 802.11b.
The SST12LP14 has excellent linearity, typically <4%
added EVM up to 20 dBm output power which is essential
for 54 Mbps 802.11g operation while meeting 802.11g
spectrum mask at 23 dBm. The SST12LP14 also has
wide-range (>25 dB), temperature-stable (~1 dB over
80°C), single-ended/differential power detectors which
lower users’ cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total IREF <4 mA) makes the
SST12LP14 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST12LP14 ideal for
the final stage power amplification in battery-powered
802.11g/b WLAN transmitter applications.
The SST12LP14 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
2.4 GHz Power Amplifier
SST12LP14
SST12LP142.4 GHz Power Amplifier


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