K8D6316UTM-LC09 datasheet(4/48 Pages) SAMSUNG

Part #	K8D6316UTM-LC09

Description	64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

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Manufacturer	SAMSUNG [Samsung semiconductor]

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NOR FLASH MEMORY

K8D6x16UTM / K8D6x16UBM

Revision 1.6

September, 2006

4

Table 2. K8D6316U DEVICE BANK DIVISIONS

Device

Part Number

Bank 1

Bank 2

Mbit

Block Sizes

Mbit

Block Sizes

K8D6316U

16 Mbit

Eight 8 Kbyte/4 Kword,

thirty-one 64 Kbyte/32 Kword

48 Mbit

Ninety-six

64 Kbyte/32 Kword

ORDERING INFORMATION

K 8 D 6x 1 6 U T M - T I 0 7

Samsung

NOR Flash Memory

Device Type

Dual Bank Boot Block

Bank Division

63 = 16Mbits + 48Mbits

Operating Temperature Range

C = Commercial Temp. (0

°C to 70 °C)

I = Industrial Temp. (-40

°C to 85 °C)

Block Architecture

T = Top Boot Block

B = Bottom Boot Block

Version

M = 1st Generation

Access Time

07 = 70 ns

08 = 80 ns

09 = 90 ns

Operating Voltage Range

2.7V to 3.6V

Organization

x8/x16 Selectable

Table 1. PRODUCT LINE-UP

Part No.

- 7

-8

-9

Vcc

2.7V~3.6V

Max. Address Access Time (ns)

70ns

80ns

90ns

Max. CE Access Time (ns)

70ns

80ns

90ns

Max. OE Access Time (ns)

25ns

35ns

Package

P = 48TSOP1(Lead-Free) Y = 48 TSOP1

D : FBGA(Lead Free)

F : FBGA

L : TBGA(Lead Free)

T : TBGA

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K8D6316UTM-LC09 Datasheet(PDF) 4 Page - Samsung semiconductor

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