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SST12LP00-QV6E-K Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST12LP00-QV6E-K Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 14 page ©2006 SST Communications Corp. S71283-01-000 3/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Preliminary Specifications FEATURES: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85 °C • High linear output power: – >24 dBm P1dB • High power-added efficiency/low operating cur- rent for Bluetooth applications – ~50% PAE or 115 mA total current consumption @ Pout = 23 dBm for Vcc = 3.3V and GCTL = 3.0V • Low idle current –~10 mA ICQ • Simple input/output matching • Packages available – 6-contact VQFN and UQFN (3 x 1.6mm2) APPLICATIONS: • Bluetooth • USB Dongles • 2.4 GHz Cordless phones PRODUCT DESCRIPTION The SST12LP00 is a high-power and high-gain power amplifier based on the highly reliable InGaP/GaAs HBT technology. SST12LP00 is easily configured for high-power and high-efficiency applications while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 30 dB gain with better than 50% power added efficiency @ Pout = 23 dBm. The SST12LP00’s excellent linearity is well suited for Class 1 Bluetooth operation. The power amplifier IC also features easy board-level usage along with high speed power up/down control. A low reference current makes SST12LP00 ideal for the final stage power amplification in battery-powered Bluetooth, USB Don- gle, or cordless phone transmitter applications. The SST12LP00 is offered in both 6-contact VQFN and UQFN packages. See Figure 2 for pin assign- ments and Table 1 for pin descriptions. 2.4-2.5 GHz Power Amplifier SST12LP00 SST12LP002.4 GHz Power Amplifier |
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