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SST12LP00 Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc

Part No. SST12LP00
Description  2.4-2.5 GHz Power Amplifier
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Maker  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
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SST12LP00 Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc

 
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©2006 SST Communications Corp.
S71283-01-000
3/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
High Gain:
– Typically 28 dB gain across 2.4– 2.5 GHz over
temperatures 0– 85
°C
High linear output power:
– >24 dBm P1dB
High power-added efficiency/low operating cur-
rent for Bluetooth applications
– ~50% PAE or 115 mA total current consumption
@ Pout = 23 dBm for Vcc = 3.3V and GCTL =
3.0V
Low idle current
–~10 mA ICQ
Simple input/output matching
Packages available
– 6-contact VQFN and UQFN (3 x 1.6mm2)
APPLICATIONS:
Bluetooth
USB Dongles
2.4 GHz Cordless phones
PRODUCT DESCRIPTION
The SST12LP00 is a high-power and high-gain power
amplifier based on the highly reliable InGaP/GaAs
HBT technology. SST12LP00 is easily configured for
high-power and high-efficiency applications while
operating over the 2.4- 2.5 GHz frequency band. This
device typically provides 30 dB gain with better than
50% power added efficiency @ Pout = 23 dBm.
The SST12LP00’s excellent linearity is well suited for
Class 1 Bluetooth operation. The power amplifier IC
also features easy board-level usage along with high
speed power up/down control. A low reference current
makes SST12LP00 ideal for the final stage power
amplification in battery-powered Bluetooth, USB Don-
gle, or cordless phone transmitter applications.
The SST12LP00 is offered in both 6-contact VQFN
and UQFN packages. See Figure 2 for pin assign-
ments and Table 1 for pin descriptions.
2.4-2.5 GHz Power Amplifier
SST12LP00
SST12LP002.4 GHz Power Amplifier


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