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SST11LP11 Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST11LP11 Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 14 page ©2005 SST Communications Corp. S71284-00-000 1/05 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Preliminary Specifications FEATURES: •Gain: – ~24 dB gain across the 4.9-5.8 GHz band • High linear output power: – ~25 dBm P1dB – EVM~4% at 18 dBm over 4.9-5.8 GHz for 64 QAM/54 Mbps operation – ACPR below IEEE 802.11a Mask up to 21 dBm across full band • Low idle current –~80 mA ICQ • Low shut-down current (< 1 µA) • 20 dB dynamic range on-chip differential linear power detection • Simple RF matching circuits • Packages available – 16-contact VQFN (3mm x 3mm) – Non-Pb (lead-free) packages available APPLICATIONS: • WLAN (IEEE 802.11a) •Japan WLAN • HyperLAN2 • Multimedia PRODUCT DESCRIPTION The SST11LP11 is a high-performance power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP11 is designed to operate over the entire WLAN 802.11a band between 4.9-5.8 GHz frequency band for the U.S., European, and Japanese markets while achieving highly-linear power and low EVM. The SST11LP11 power amplifier IC features easy board- level usage along with on-chip linear power detection and power-down control. These features coupled with low cur- rent draw at maximum linear power make the SST11LP11 ideal for battery-powered 802.11a WLAN transmitter appli- cations. The SST11LP11 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 SST11LP114.9-5.8 GHz High-Linearity Power Amplifier |
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