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CY7C1351 Datasheet(PDF) 11 Page - Cypress Semiconductor

Part # CY7C1351
Description  128Kx36 Flow-Through SRAM with NoBL TM Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1351 Datasheet(HTML) 11 Page - Cypress Semiconductor

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CY7C1351
11
Switching Waveforms (continued)
ADV/LD
CLK
ADDRESS
CE
1a
Data-
In/Out
tCYC
tCH tCL
tALS
tALH
RA1
tAH
tAS
tCES tCEH
tCDV
Q1
= DON’T CARE
= UNDEFINED
The combination of WE & BWS[3:0] defines a write cycle (see Write Cycle Description table).
Out
tCLZ
tDOH
CE is the combination of CE1, CE2, and CE3. All chip enables need to be active in order to select
the device. Any chip enable can deselect the device. RAx stands for Read Address X, WAx stands for
Device
originally deselected
Write Address X, Dx stands for Data-in for location X, Qx stands for Data-out for location X. CEN held
WA2
Q1+1
Out
Q1+2
Out
Q1+3
Out
RA3
tCLZ
tCHZ
D2+1
In
D2+2
In
D2+3
In
D2
In
tCDV
Q3
Out
tDS
tDH
Burst Sequences
BWS[3:0]
tWS tWH
WE
tWS tWH
LOW. During burst writes, byte writes can be conducted by asserting the appropriate BWS[3:0] input signals.
Burst order determined by the state of the MODE input. CEN held LOW. OE held LOW.
Out
Q3+1


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