NTMD2P01R2 datasheet(3/6 Pages) ONSEMI

Part #	NTMD2P01R2

Description	Power MOSFET ??.3 Amps, ??6 Volts

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NTMD2P01R2

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VGS = −1.5 V

VGS = −1.7 V

VGS = −1.9 V

TJ = 55°C

TJ = 25°C

VGS = −10 V

VGS = −4.5 V

VGS = −2.5 V

Figure 1. On−Region Characteristics.

Figure 2. Transfer Characteristics.

Figure 3. On−Resistance vs. Gate−to−Source

Voltage.

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage.

Figure 5. On−Resistance Variation with

Temperature.

Figure 6. Drain−to−Source Leakage Current

vs. Voltage.

VGS = −2.1 V

TJ = 25°C

TJ = 100°C

TJ = 25°C

VGS = −2.7 V

VGS = −4.5 V

ID = −2.4 A

VGS = −4.5 V

VGS = 0 V

TJ = 125°C

TJ = 25°C

TJ = 100°C

VDS > = −10 V

150

−50

1.6

1.4

−25

0

25

75

1.2

1

0.8

0.6

20

0

1000

100

4

8

12

16

10

1

0.1

0.01

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

125

100

50

TJ, JUNCTION TEMPERATURE (°C)

1

0.12

0.1

1.5

2

2.5

3.5

0.08

0.06

0.04

4.5

4

3

2

0.2

0.15

46

0.1

0.05

0

8

1

5

4

1.5

2

3

2

0

3

0

4

3

6

2

1

0

8

1

2.5

4

210

−ID, DRAIN CURRENT (AMPS)

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

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NTMD2P01R2 Datasheet(PDF) 3 Page - ON Semiconductor

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