Monolithic Dual Switching Diode

Common Cathode

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

Vdc

Forward Current

IF

200

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to +150

°C

DEVICE MARKING

BAV70LT1 = A4

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 µAdc)

V(BR)

70

—

Vdc

Reverse Voltage Leakage Current (Note 3)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc)

(VR = 70 Vdc, TJ = 150°C)

IR

—

—

—

60

2.5

100

µAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

—

1.5

pF

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

—

—

—

—

715

855

1000

1250

mVdc

Reverse Recovery Time

RL = 100 Ω

(IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1)

trr

—

6.0

ns

1. FR–5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

3. For each individual diode while second diode is unbiased.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

November, 2001 – Rev. 2

1

Publication Order Number:

BAV70LT1/D

BAV70LT1

1

2

3

CASE 318–08, STYLE 9

SOT–23 (TO–236AB)

3

CATHODE

ANODE

1

2

ANODE