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MGF0911A Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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MGF0911A Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 3 page  MGF0911A MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 L, S BAND POWER GaAs FET Nov. ´97 9.4 2-R1.25 DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power P1dB=41dBm(TYP) @2.3GHz • High power gain GLP=11dB(TYP) @2.3GHz • High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid APPLICATION UHF band power amplifiers QUALITY GRADE • IG RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=2.6A • Rg=50 Ω • Refer to Bias Procedure OUTLINE DRAWING Unit:millimeters GF-21 GATE SOURCE(FLANGE) DRAIN 3 2 1 Typ Max Min Limits Parameter Test conditions ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Unit IDSS VGS(off) Saturated drain current 10 – -5 A S V – – 3.0 dBm dB Gate to source cut-off voltage – – – 41 11 -2 40 – gm ηadd Transconductance Power added efficiency at P1dB Thermal resistance *1 10 % – 40 – ˚C/W 4.0 – – VDS=3V,VGS=0V VDS=3V,ID=20mA VDS=3V,ID=2.6A VDS=10V,ID 2.6A,f=2.3GHz ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol Parameter Ratings 175 VGDO VGSO PT Tch Tstg Unit Gate to source voltage Gate to drain voltage Total power dissipation *1 Channel temperature Storage temperature -15 -15 37.5 -65 to +175 V V W ˚C ˚C ID Drain current 10 A IGR IGF Reverse gate current Forward gate current 30 63 mA mA *1:TC=25˚C P1dB GLP Rth(ch-c) Output power at 1dB gain compression Linear power gain *2 ∆Vf method *1:Channel to case *2:Pin=25dBm 17.5 1.0 14.3 1 2 2 3 10.0 |
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Similar Description - MGF0911A |
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