MITSUBISHI MEMORY CARD

FLASH MEMORY CARDS

MITSUBISHI

ELECTRIC

14/22

Feb.1999 Rev2.0

Note 8 : If Vcc error bit is detected, try to programme again at Vcc level.

This is an erase algorithm for a memor y block and not for a card.

Reading data from blocks other than the suspended block in the zone generating erase suspend.

.OR. : =Logical or

;

.AND. : =Logical and

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Conditions

Ratings

Unit

-0.5 to 6.5

V

Input voltage

V

Output voltage

V

Operating temperature

Read/Write Operation

0 to 70

° C

Storage temperature

-40 to 80

° C

With respect to GND

D

BI T 6.=

READ /

PROGRAMME

WRITE RESUME

COMMAND(D0h)

PROGRAMME SUSPEND PASSED

READ STATUS REGISTER

BIT 6.=

WRITE SUSPEND

COMMAND(B0h)

CHECK ERASE

STATUS BIT

CHECK ERASE

SUSPEND BIT

BIT 7.=

BIT 7.=

C

BI T 6.AND.15.=

READ /

PROGRAMME

WRITE RESUME

COMMAND(D0D0h)

PROGRAMME SUSPEND PASSED

READ STATUS REGISTER

BIT 6.AND.15.=

WRITE SUSPEND

COMMAND(B0B0h)

CHECK ERASE

STATUS BIT

CHECK ERASE

SUSPEND BIT

BIT 7.AND.15.=

BIT 7.AND.15.=