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2N6547 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N6547
Description  HIGH POWER NPN SILICON TRANSISTOR
Download  4 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N6547 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off Current
(VBE = 0)
VCE = 850 V
VCE = 850 V
Tc = 100
o C
1
4
mA
mA
ICER
Collector Cut-off Current
(RBE = 10
Ω)
VCE = 850 V
Tc = 100
oC5
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 9 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L = 25 mH
400
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 10 A
IB = 2 A
IC = 15 A
IB = 3 A
IC = 10A
IB = 2 A Tc =100
o C
1.5
5
2.5
V
V
V
VBE(sat)
∗ Base-Emitter Saturation
Voltage
IC = 10 A
IB = 2 A
IC = 10A
IB = 2 A Tc =100
o C
1.6
1.6
V
V
hFE
DC Current Gain
IC = 5 A
VCE = 2 V
IC = 10 A
VCE = 2 V
12
6
30
fT
Transition Frequency
IC = 0.5 A
VCE = 10 V
f = 1 MHz
6
24
MHz
CCBO
Collector-Base
Capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
360
pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
RESISTIVE LOAD SWITCHING TIMES
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ton
ts
tf
Turn-on Time
Storage Time
Fall Time
VCC = 250 V
IC = 10 A
IB1 = - IB2 = 2 A
Tp ≥ 25 µs
1
4
0.7
µs
µs
µs
INDUCTIVE LOAD SWITCHING TIMES
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ts
tf
Storage Time
Fall Time
VCL = 450 V
IC = 10 A
LC = 180
µH
IB1 = 2 A
VBE = -5 V
Tc = 100
oC
5
1.5
µs
µs
2N6547
2/4


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