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PA46 Datasheet(PDF) 2 Page - Cirrus Logic

Part No. PA46
Description  HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
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Maker  APEX [Cirrus Logic]
Homepage  http://www.cirrus.com
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PA46 Datasheet(HTML) 2 Page - Cirrus Logic

   
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APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PA46
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V
S to –VS
150V
OUTPUT CURRENT, continuous within SOA
5A
POWER DISSIPATION, continuous @ T
C = 25°C
75W
INPUT VOLTAGE, differential
±16 V
INPUT VOLTAGE, common mode
±V
S
TEMPERATURE, pin solder – 10 sec
220
°C
TEMPERATURE, junction
150
°C
TEMPERATURE, storage
–65 to +150
°C
TEMPERATURE RANGE, powered (case)
–55 to +125
°C
PARAMETER
TEST CONDITIONS1
MIN
TYP
MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
510
mV
OFFSET VOLTAGE, vs. temperature
Full temperature range
10
50
µV/°C
OFFSET VOLTAGE, vs supply
815
µV/V
OFFSET VOLTAGE, vs time
2
µV √kh
BIAS CURRENT, initial
20
100
pA
BIAS CURRENT, vs supply
2
pA/V
OFFSET CURRENT, initial
200
pA
INPUT IMPEDANCE, DC
1011
INPUT CAPACITANCE
5pF
COMMON MODE, voltage range
±V
S–10
V
COMMON MODE REJECTION, DC
90
106
dB
NOISE, broad band
10kHz BW, R
S = 1KΩ
10
µV RMS
GAIN
OPEN LOOP at 15Hz
94
106
dB
GAIN BANDWIDTH PRODUCT @ 1MHz
R
L = 500Ω, CC = 10pF
4.5
MHz
POWER BANDWIDTH
C
C = 10pF, 130V p-p, RL = 8Ω
66
kHz
PHASE MARGIN
Full temp range, C
C = 68pF, RL = 10Ω
60
°
OUTPUT
VOLTAGE SWING
I
O = 5A
±V
S–10
±V
S–8V
CURRENT, continuous
5
A
SETTLING TIME to .1%
10V step, A
V = –10
2
µs
SLEW RATE
C
C = 10pF, RL = 8Ω
27
V/
µs
CAPACITIVE LOAD
A
V = +1, CC = 68pF
10
nF
RESISTANCE , no load
R
CL = 0
150
POWER SUPPLY
VOLTAGE3
See Note 3
±15
±50
±75
V
CURRENT, quiescent
30
50
mA
CURRENT, quiescent, class C
5mA
THERMAL2
RESISTANCE, AC junction to case
F > 60Hz
1.3
°C/W
RESISTANCE, DC junction to case
F < 60Hz
1.7
°C/W
RESISTANCE, junction to air
Full temperature range
30
°C/W
TEMPERATURE RANGE, case
Meets full range specifications
–25
+85
°C
SPECIFICATIONS
CAUTION
The PA46 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The exposed substrate is beryllia (BeO). Do not crush, machine, or subject to temperatures in excess of 850
°C to avoid
generating toxic fumes.
NOTES: 1.
Unless otherwise noted T
C = 25°C, CC = 10pF, RC = 1KΩ. DC input specifications are ± value given. Power supply voltage is
typical rating.
2.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF. For guidance, refer to heatsink data sheet.
3.
Derate maximum supply voltage .5 V/
°C below case temperature of 25°C. No derating is needed above T
C = 25°C.


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