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2SC5128 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SC5128
Description  Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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2SC5128 Datasheet(HTML) 1 Page - Panasonic Semiconductor

   
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1
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
800
800
500
8
10
5
3
40
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 800V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 2A
IC = 2A, IB = 0.4A
IC = 2A, IB = 0.4A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 200V
min
500
15
8
typ
20
max
100
100
1.0
1.5
1.0
3.0
0.3
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
φ3.2±0.1
1.45
±0.15
0.7
±0.1
7
°


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