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NAND01G-B2B Datasheet(PDF) 44 Page - STMicroelectronics |
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NAND01G-B2B Datasheet(HTML) 44 Page - STMicroelectronics |
44 / 62 page DC And AC parameters NAND01G-B2B, NAND02G-B2C 44/62 Table 23. DC Characteristics, 3V Devices Symbol Parameter Test Conditions Min Typ Max Unit IDD1 Operating Current Sequential Read tRLRL minimum E=VIL, IOUT = 0 mA -10 20 mA IDD2 Program - -10 20 mA IDD3 Erase - -10 20 mA IDD4 Standby current (TTL)(1) E=VIH, WP=0/VDD 1 mA IDD5 Standby Current (CMOS)(1) E=VDD-0.2, WP=0/VDD - 10 50 µA ILI Input Leakage Current(1) VIN= 0 to VDDmax - - ±10 µA ILO Output Leakage Current(1) VOUT= 0 to VDDmax - - ±10 µA VIH Input High Voltage - 0.8VDD - VDD+0.3 V VIL Input Low Voltage - -0.3 - 0.2VDD V VOH Output High Voltage Level IOH = -400µA 2.4 - - V VOL Output Low Voltage Level IOL = 2.1mA - - 0.4 V IOL (RB) Output Low Current (RB) VOL = 0.4V 8 10 mA VLKO VDD Supply Voltage (Erase and Program lockout) - - - 1.7 V 1. Leakage current and standby current double in stacked devices |
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