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NESG270034 Datasheet(PDF) 1 Page - California Eastern Labs

Part No. NESG270034
Description  NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
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Maker  CEL [California Eastern Labs]
Homepage  http://www.cel.com
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NESG270034 Datasheet(HTML) 1 Page - California Eastern Labs

 
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FEATURES
• This product is suitable for medium output power (2 W) amplification
Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG270034
NESG270034-AZ
3-pin power minimold
(34 PKG) (Pb-Free)
Note1,
2
25 pcs
(Non reel)
• Magazine case
NESG270034-T1
NESG270034-T1-AZ
1 kpcs/reel
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
9.2
V
Emitter to Base Voltage
VEBO
2.8
V
Collector Current
IC
750
mA
Total Power Dissipation
Ptot
Note
1.9
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 34.2 cm
2 × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
Document No. PU10577EJ01V0DS (1st edition)
Date Published September 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005


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