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HAT2058R Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. HAT2058R
Description  Silicon N Channel Power MOS FET High Speed Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HAT2058R Datasheet(HTML) 3 Page - Renesas Technology Corp

 
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HAT2058R/HAT2058RJ
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 µA, VDS = 0
Zero gate voltage
HAT2058R
I
DSS
——
1
µAV
DS = 100 V, VGS = 0
drain current
HAT2058RJ I
DSS
0.1
µA
Zero gate voltage
HAT2058R
I
DSS
——
µAV
DS = 80 V, VGS = 0
drain current
HAT2058RJ I
DSS
——
10
µA
Ta = 125
°C
Gate to source cutoff voltage
I
GSS
——
±10
µAV
GS = ±16 V, VDS = 0
Static drain to source on state
resistance
V
GS(off)
1.0
2.5
V
V
DS = 10 V, ID = 1 mA
Forward transfer admittance
|y
fs|3
5
S
I
D = 2 A*
1, V
DS = 10 V
Static drain to source on state
R
DS(on)
120
145
m
I
D = 2 A*
1, V
GS = 10 V
resistance
R
DS(on)
150
180
m
I
D = 2 A*
1, V
GS = 4 V
Input capacitance
Ciss
420
pF
V
DS = 10 V, VGS = 0
Output capacitance
Coss
180
pF
f = 1 MHz
Reverse transfer capacitance
Crss
100
pF
Turn-on delay time
td(on)
10
ns
V
GS = 10 V, ID = 2 A
Rise time
tr
30
ns
V
DD ≅ 30 V
Turn-off delay time
td(off)
110
ns
Fall time
tf
60
ns
Body-drain diode forward voltage V
DF
0.85
1.1
V
I
F = 4 A, VGS = 0*
1
Body-drain diode reverse
recovery time
trr
75
ns
I
F = 4 A, VGS = 0
diF/dt = 50 A/
µs
Note:
1. Pulse test


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