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MJD44E3 Datasheet(PDF) 2 Page - ON Semiconductor |
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MJD44E3 Datasheet(HTML) 2 Page - ON Semiconductor |
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MJD44E3 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA Emitter Cutoff Current (VEB = 7 Vdc) IEBO − − 1 mA ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 5 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 20 mAdc) VCE(sat) − − − − 1.5 2 Vdc Base−Emitter Saturation Voltage (IC = 5 Adc, IB = 10 mAdc) VBE(sat) − − 2.5 Vdc DC Current Gain (VCE = 5 Vdc, IC = 5 Adc) hFE 1000 − − − DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Ccb − − 130 pF SWITCHING TIMES Delay and Rise Times (IC = 10 Adc, IB1 = 20 mAdc) td + tr − 0.6 − ms Storage Time (IC = 10 Adc, IB1 = IB2 = 20 mAdc) ts − 2 − ms Fall Time (IC = 10 Adc, IB1 = IB2 = 20 mAdc) tf − 0.5 − ms 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 3 5 10 20 100 5 2 1 0.2 0.1 0.5 50 230 1 Figure 1. Maximum Forward Bias Safe Operating Area Figure 2. Power Derating TC TA TC = 25°C SINGLE PULSE BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 25 25 T, TEMPERATURE (°C) 0 50 75 100 125 150 20 15 10 5 2.5 0 2 1.5 1 0.5 TA TC 0.3 3 100 ms 1 ms 5 ms |
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