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TCM8002 Datasheet(PDF) 6 Page - Texas Instruments

Part No. TCM8002
Description  DATA PROCESSOR FOR CELLULAR TELEPHONE
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TCM8002 Datasheet(HTML) 6 Page - Texas Instruments

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TCM8002
DATA PROCESSOR FOR CELLULAR TELEPHONE
SLWS008C – SEPTEMBER 1994 – REVISED JUNE 1996
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating temperature range
Supply voltage range, VDD, VSS (see Note 1)
– 0.5 V to 6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI
– 0.5 V to VDD + 0.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range (includes open-drain outputs), VO
– 0.5 V to VDD + 0.5 V
. . . . . . . . . . . . . . . . . . . . . . . . .
Operating ambient temperature range, TA
–40
°C to 85°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–65
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage Values are with respect to GND.
recommended operating conditions
MIN
NOM
MAX
UNIT
Supply voltage VDD
VDD = 3 V
2.7
3.3
3.6
V
Supply voltage, VDD
VDD = 5 V
4.5
5
5.5
V
Input voltage, VI
0
VDD
V
Output voltage, VO
0
VDD
V
High-level input voltage, VIH
0.7 VDD
Low level input voltage VIL
VDD = 3 V
0.3 VDD
V
Low-level input voltage, VIL
VDD = 5 V
0.2 VDD
V
Operating ambient temperature range, TA
–40
25
85
°C
electrical characteristics over recommended operating conditions, VDD = 3.3 V (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOH
High-level output voltage
IOH = – 0.9 mA
VDD – 0.55
V
VOL
Low-level output voltage
IOL = 1.6 mA
0.5
V
VIT +
Positive-going input threshold voltage
0.7 VDD
V
VIT –
Negative-going input threshold voltage
0.3 VDD
V
Vhys
Hysteresis (VIT + – VIT –)
0.1 VDD
0.3 VDD
V
IOZ
High-impedance output current
VI = VDD or VSS
±10
µA
IIL
Low-level input current
VI = VSS
–1
µA
IIH
High-level input current
VI = VDD
1
µA
IO
Pullup output current
VI = VSS
– 2.12
– 5.32
– 10.18
µA
Default mode
1.4
IDD
Supply current with 2.56-MHz crystal
Low-power mode
1.1
mA
Low-power mode, SAT off
0.9


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