©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

MMBFJ271 Rev. A

tm

June 2006

MMBFJ271

P-Channel Switch

Features

• This device is designed for low level analog switching sample and hold

circuits and chopper stabilized amplifiers.

• Sourced from process 88.

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

- These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch

Note3 : Short duration test pulse used to minimize self-heating effect

.

Symbol

Parameter

Value

Units

Drain-Gate Voltage

-30

V

Gate-Source Voltage

30

V

Forward Gate Current

50

mA

Operating and Storage Junction Temperature Range

-55 ~ 150

°C

Symbol

Parameter

Value

Units

Total Device Dissipation

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

556

°C/W

Symbol

Parameter

Test Condition

MIN

MAX

Units

Gate-Source Breakdwon Voltage

30

V

Gate Reverse Current

200

pA

Gate-Source Cutoff Voltage

1.5

4.5

V

Zero-Gate Voltage Drain Current *

-6.0

-50

mA

gfs

Forward Transferconductance

8000

18000

µmhos

goss

Common- Source Output Conduc-

tance

500

µmhos

Mark : 62T

D

S

G

SOT-23