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MMBFJ271 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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MMBFJ271 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MMBFJ271 Rev. A tm June 2006 MMBFJ271 P-Channel Switch Features • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. - These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics (Note3) On Characteristics (Note3) Note3 : Short duration test pulse used to minimize self-heating effect . Symbol Parameter Value Units VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C Symbol Parameter Value Units PD Total Device Dissipation Derate above 25 °C 225 1.8 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient 556 °C/W Symbol Parameter Test Condition MIN MAX Units V(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 30 V IGSS Gate Reverse Current VGS = 20V, VDS = 0 200 pA VGS(off) Gate-Source Cutoff Voltage VDS = -15V, ID = -1.0nA 1.5 4.5 V IDSS Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0 -6.0 -50 mA gfs Forward Transferconductance VGS = 0V, VDS = 15V, f = 1.0kHz 8000 18000 µmhos goss Common- Source Output Conduc- tance VGS = 0V, VDS = 15V, f = 1.0kHz 500 µmhos Mark : 62T D S G SOT-23 |
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