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H7N0608LD Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. H7N0608LD
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  12 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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H7N0608LD Datasheet(HTML) 4 Page - Renesas Technology Corp

 
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H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 4 of 11
Main Characteristics
160
120
80
0
50
100
150
200
0.1
0.3
1
3
10
30
100
100
80
60
40
20
0
24
6
8
10
1000
300
100
30
10
1
0.3
0.03
0.01
0.1
3
Ta = 25
°C
10
µs
100
µs
40
4.5 V
4.0 V
3.6 V
10 V
100
80
60
40
20
0
24
68
10
–40
°C
25
°C
Tc = 150
°C
VDS = 10 V
Pulse Test
VGS = 3.2 V
DC Operation
(Tc = 25
°C)
PW = 10 ms
(1 shot)
Pulse Test
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS
(V)
Maximum Safe Operation Area
Gate to Source Voltage
VGS
(V)
Typical Transfer Characteristics
Drain to Source Voltage
VDS
(V)
Typical Output Characteristics
Operation in
this area is
limited by RDS(on)


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