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MF38M1-L6DAGXX Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part No. MF38M1-L6DAGXX
Description  8/16-bit Data Bus Static RAM Card
Download  11 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MF38M1-L6DAGXX Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MITSUBISHI
ELECTRIC
5/11
CAPACITANCE
Limits
Min.
Typ.
Max.
C I
Input capacitance
V I =GND, V I =25mVrms
30
pF
f=1 MH Z, Ta=25°C
C O
Output capacitance
V O=GND, V O=25mVrms f=1 MH Z,
Ta=25°C
20
pF
Note 4 : These parameters are not 100% tested.
SWITCHING CHARACTERISTICS
Read Cycle (Ta=0~55°C, VCC=5V±5%, unless otherwise noted)
Limits
Symbol
Parameter
Min.
Typ.
Max.
Unit
t CR
Read cycle time
200
ns
t a(A)
Address access time
200
ns
t a(CE)
Card enable access time
200
ns
t a(OE)
Output enable accese time
100
ns
t dis (CE)
Output disable time (from CE#)
90
ns
t dis (OE)
Output disable time (from OE#)
90
ns
t en (CE)
Output enable time (from CE#)
5
ns
t en (OE)
Output enable time (from OE#)
5
ns
t V (A)
Data valid time (after address change)
0
ns
TIMING REQUIREMENTS
Write Cycle (Ta=0~55°C, VCC=5V±5%, unless otherwise noted)
Limits
Symbol
Parameter
Min.
Typ.
Max.
Unit
t CW
Write cycle time
200
ns
t w(WE)
Write pulse width
120
ns
t su(A)
Address set up time
20
ns
t su(A-WEH)
Address set up time with respect to WE# high
140
ns
t su(CE-WEH)
Card enable set up time with respect to WE# high
140
ns
t su(D-WEH)
Data set up time with respect to WE# high
60
ns
t h(D)
Data hold time
30
ns
t rec(WE)
Write recovery time
30
ns
t dis(WE)
Output disable time (from WE#)
90
ns
t dis(OE)
Output disable time (from OE#)
90
ns
t en(WE)
Output enable time (from WE#)
5
ns
t en(OE)
Output enable time (from OE#)
5
ns
t su(OE-WE)
OE# set up time with respect to WE# low
10
ns
t h(OE-WE)
OE# hold time with respect to WE# high
10
ns
Symbol
Unit
Parameter
Test conditions


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