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IXTQ96N15P Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXTQ96N15P
Description  N-Channel Enhancement Mode Preliminary Data Sheet
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Maker  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
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IXTQ96N15P Datasheet(HTML) 1 Page - IXYS Corporation

   
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© 2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J = 25°C to 175°C
150
V
V
DGR
T
J = 25°C to 175°C; RGS = 1 MΩ
150
V
V
GSM
±20
V
I
D25
T
C = 25°C96
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C = 25°C, pulse width limited by TJM
250
A
I
AR
T
C = 25°C60
A
E
AR
T
C = 25°C40
mJ
E
AS
T
C = 25°C
1.0
J
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
T
J ≤ 150°C, RG = 4 Ω
P
D
T
C = 25°C
480
W
T
J
-55 ... +175
°C
T
JM
175
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-268
5.0
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99131C(05/04)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS = 0 V, ID = 250 µA
150
V
V
GS(th)
V
DS = VGS, ID = 250µA
2.5
5.0
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±100
nA
I
DSS
V
DS = VDSS
25
µA
V
GS = 0 V
T
J = 150°C
250
µA
R
DS(on)
V
GS = 10 V, ID = 0.5 ID25
24
m
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
IXTQ 96N15P
V
DSS
= 150
V
IXTT 96N15P
I
D25
=
96
A
R
DS(on)
=
24 m
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
Preliminary Data Sheet


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