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IXTQ96N15P Datasheet(PDF) 2 Page - IXYS Corporation

Part No. IXTQ96N15P
Description  N-Channel Enhancement Mode Preliminary Data Sheet
Download  5 Pages
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Maker  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
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IXTQ96N15P Datasheet(HTML) 2 Page - IXYS Corporation

   
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 96N15P
IXTT 96N15P
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = 0.5 ID25, pulse test
35
45
S
C
iss
3500
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
1000
pF
C
rss
280
pF
t
d(on)
30
ns
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 60 A
33
ns
t
d(off)
R
G = 4 Ω (External)
66
ns
t
f
18
ns
Q
g(on)
110
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
26
nC
Q
gd
59
nC
R
thJC
0.31 K/W
R
thCK
(TO-3P)
0.21
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS = 0 V
96
A
I
SM
Repetitive
250
A
V
SD
I
F = IS, VGS = 0 V,
1.5
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F = 25 A
150
ns
-di/dt = 100 A/
µs
Q
RM
V
R = 100 V
2.0
µC
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463


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