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LM3208 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM3208
Description  650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LM3208 Datasheet(HTML) 4 Page - National Semiconductor (TI)

 
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System Characteristics The following spec table entries are guaranteed by design providing the component
values in the typical application circuit are used (L = 3.0µH, DCR = 0.12
Ω, FDK MIPW3226D3R0M; C
IN = 10µF, 6.3V, 0805,
TDK C2012X5R0J106K; C
OUT = 4.7µF, 6.3V, 0603, TDK C1608X5R0J475M). These parameters are not guaranteed by
production testing. Min and Max values are specified over the ambient temperature range T
A = −30˚C to 85˚C. Typical val-
ues are specified at PV
IN =VDD = EN = 3.6V and TA = 25˚C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
T
RESPONSE
Time for V
OUT to rise from 0.8V
to 3.4V (to reach 3.35V)
V
IN = 4.2V, RLOAD = 5.5
25
40
µs
Time for V
OUT to fall from 3.4V
to 0.8V
V
IN = 4.2V, RLOAD =15
35
45
µs
C
CON
V
CON input capacitance
V
CON = 1V, VIN=2.7V to 5.5V,
Test frequency = 100kHz
510
pF
C
EN
EN input capacitance
EN = 2V, V
IN= 2.7V to 5.5V,
Test frequency = 100kHz
510
pF
V
CON
(S>L)
R
DSON(P) management
threshold
Threshold for PFET R
DSON(P) to change
from 960m
Ω to 140mΩ
0.39
0.42
0.45
V
V
CON
(L>S)
R
DSON(P) management
threshold
Threshold for PFET R
DSON(P) to change
from 140m
Ω to 960mΩ
0.37
0.40
0.43
V
I
OUT, MAX
Maximum Output Current
V
IN = 2.7V to 5.5V, VCON = 0.45V to
1.44V, L = MIPW3226D3R0
650
mA
V
IN = 2.7V to 5.5V, VCON = 0.32V to
0.45V, L = MIPW3226D3R0
400
mA
Linearity
Linearity in control range 0.32V
to 1.44V
V
IN = 3.9V (Note 14)
Monotonic in nature
−3
+3
%
−50
+50
mV
T
ON
Turn on time
(time for output to reach 97% of
final value after Enable low to
high transition)
EN = Low to High, V
IN = 4.2V, VOUT =
3.4V,
I
OUT
≤ 1mA
40
60
µs
η
Efficiency
V
IN = 3.6V, VOUT = 0.8V, IOUT = 90mA
81
%
V
IN = 3.6V, VOUT = 1.5V, IOUT = 150mA
89
%
V
IN = 3.9V, VOUT = 3.4V, IOUT = 400mA
95
%
V
OUT_ripple
Ripple voltage at
no pulse skip condition
V
IN = 2.7V to 4.5V, VOUT = 0.8V to 3.4V,
Differential voltage = V
IN -VOUT > 1V,
I
OUT = 0mA to 400mA (Note 12)
10
mVp-p
Ripple voltage at
pulse skip condition
V
IN = 5.5V to dropout, VOUT = 3.4V,
I
OUT = 650mA (Note 12)
60
mVp-p
Line_tr
Line transient response
V
IN = 3.6V to 4.2V,
T
R =TF = 10µs,
V
OUT = 0.8V, IOUT = 100mA
50
mVpk
Load_tr
Load transient response
V
IN = 3.1/3.6/4.5V, VOUT = 0.8V,
I
OUT = 50mA to 150mA
50
mVpk
Max Duty
cycle
Maximum duty cycle
100
%
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2: All voltages are with respect to the potential at the GND pins. The LM3208 is designed for mobile phone applications where turn-on after power-up is
controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry.
Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V.
Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150˚C (typ.) and disengages at TJ =
125˚C (typ.).
Note 4: The Human body model is a 100pF capacitor discharged through a 1.5k
Ω resistor into each pin. (MIL-STD-883 3015.7) The machine model is a 200pF
capacitor discharged directly into each pin.
Note 5: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
de-rated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125˚C), the maximum power
dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the
following equation: TA-MAX =TJ-MAX-OP –(θJA xPD-MAX).
www.national.com
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