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LM3208 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM3208
Description  650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LM3208 Datasheet(HTML) 3 Page - National Semiconductor (TI)

 
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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD,PVIN to SGND
−0.2V to +6.0V
PGND to SGND
−0.2V to +0.2V
EN, FB, V
CON
(SGND −0.2V)
to (V
DD +0.2V)
w/6.0V max
SW
(PGND −0.2V)
to (PV
IN +0.2V)
w/6.0V max
PV
IN to VDD
−0.2V to +0.2V
Continuous Power Dissipation
(Note 3)
Internally Limited
Junction Temperature (T
J-MAX)
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Maximum Lead Temperature
(Soldering, 10 sec)
+260˚C
ESD Rating (Notes 4, 13)
Human Body Model:
Machine Model:
2kV
200V
Operating Ratings (Notes 1, 2)
Input Voltage Range
2.7V to 5.5V
Recommended Load Current
0mA to 650mA
Junction Temperature (T
J) Range
−30˚C to +125˚C
Ambient Temperature (T
A) Range
(Note 5)
−30˚C to +85˚C
Thermal Properties
Junction-to-Ambient Thermal
100˚C/W
Resistance (
θ
JA), TLA08 Package
(Note 6)
Electrical Characteristics (Notes 2, 7, 8) Limits in standard typeface are for T
A =TJ = 25˚C. Limits in bold-
face type apply over the full operating ambient temperature range (−30˚C
≤ T
A =TJ
≤ +85˚C). Unless otherwise noted, all
specifications apply to the LM3208 with: PV
IN =VDD = EN = 3.6V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
FB, MIN
Feedback Voltage at minimum
setting
V
CON = 0.32V(Note 8)
0.75
0.80
0.85
V
V
FB, MAX
Feedback Voltage at maximum
setting
V
CON = 1.44V, VIN = 4.2V(Note 8)
3.537
3.600
3.683
V
I
SHDN
Shutdown supply current
EN = SW = V
CON = 0V,
(Note 9)
0.01
2
µA
I
Q
DC bias current into V
DD
V
CON = 0V, FB = 0V,
No Switching (Note 10)
0.6
0.7
mA
R
DSON(P)
Pin-pin resistance for Large
PFET
I
SW = 200mA, VCON = 0.5V
140
180
210
m
R
DSON(P)
Pin-pin resistance for Small
PFET
I
SW = 200mA, VCON = 0.32V
960
m
R
DSON(N) Pin-pin resistance for NFET
I
SW = -200mA, VCON = 0.5V
300
375
450
m
I
LIM
(L_PFET)
Large PFET (L) Switch peak
current limit
V
CON = 0.5V (Note 11)
985
1100
1200
mA
I
LIM
(S_PFET)
Small PFET (S) Switch peak
current limit
V
CON = 0.32V (Note 11)
650
800
900
mA
F
OSC
Internal oscillator frequency
1.8
2.0
2.2
MHz
V
IH,EN
Logic high input threshold
1.2
V
V
IL,EN
Logic low input threshold
0.5
V
I
PIN,EN
EN pin pull down current
5
10
µA
V
CON,ON
V
CON Threshold for turning on
switches
0.15
V
I
CON
V
CON pin leakage current
V
CON = 1.0V
±1
µA
Gain
V
CON to VOUT Gain
0.32V
≤ V
CON
≤ 1.44V
2.5
V/V
www.national.com
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