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MF365A-LZCATXX Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor

Part No. MF365A-LZCATXX
Description  8/16-bit Data Bus Static RAM Card
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MF365A-LZCATXX Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MITSUBISHI
ELECTRIC
6/16
Apr. 1999 Rev. 1.1
13. ELECTRICAL CHARACTERISTICS (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VOH
High output voltage
IOH= -1.0mA
2.4
V
VOL
Low output voltage
IOL=2mA
0.4
V
IIH
High input current
VI=Vcc V
10
µA
IIL
Low input current
VI=0V
CE1#, CE2#, WE#, OE#, REG#
-10
-70
µA
Other inputs
-10
IOZH
High output current
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
10
µA
in off state
VO=Vcc
IOZL
Low output current
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
-10
µA
in off state
VO=0V
Icc 1 • 1
Active supply
CE1#=CE2#=VIL, Other inputs
64KB~512KB
170
mA
current 1
=VIH or VIL,Outputs=open
1MB~4MB
230
Icc 1 • 2
Active supply
current 2
CE1#=CE2#
≤ 0.2V, Other
inputs
≤ 0.2V or ≥ Vcc-0.2V,
64KB~512KB
160
mA
Outputs=open
1MB~4MB
220
Icc 2 • 1
Standby supply
CE1#=CE2#=VIH
64KB~4MB
10
mA
current 1
Other inputs=VIH or VIL
Icc 2 • 2
Standby supply
CE1#=CE2#
≥ Vcc-0.2V
64KB~512KB
0.45
mA
current 2
Other inputs
≤ 0.2V or
≥ Vcc-0.2V
1MB~4MB
0.65
VBDET1
Battery detect
Vcc=5V, Ta=25°C
2.27
2.37
2.47
V
reference voltage 1
VBDET2
Battery detect
Vcc=5V, Ta=25°C
2.55
2.65
2.75
V
reference voltage 2
Note 2 : Currents flowing into the card are taken as positive (unsigned).
3 : Typical values are measured at Vcc=5V, Ta=25°C.
14. CAPACITANCE
Limits
Min.
Typ.
Max.
CI
Input capacitance
VI=GND, vi=25mVrms
f=1MHZ, Ta=25°C
30
pF
CO
Output Capacitance
Vo
=GND, vo=25mVrms
f
=1MHz, Ta=25°C
20
pF
Note 4 : These parameters are not 100% tested.
Symbol
Unit
Parameter
Test conditions


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