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SEP8506 Datasheet(PDF) 3 Page - Honeywell Solid State Electronics Center

Part No. SEP8506
Description  GaAs Infrared Emitting Diode
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Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center

SEP8506 Datasheet(HTML) 3 Page - Honeywell Solid State Electronics Center

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GaAs Infrared Emitting Diode
SEP8506
Radiant Intensity vs
Angular Displacement
gra_030.ds4
Angular displacement - degrees
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60
-45
-30
-15
0
+15 +30 +45 +60
Fig. 1
Radiant Intensity vs
Forward Current
gra_028.ds4
Forward current - mA
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10
20
30
40 50
100
T
A = 25 °C
Fig. 2
Forward Voltage vs
Forward Current
gra_003.ds4
Forward current - mA
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
0
20
40
60
Fig. 3
Forward Voltage vs
Temperature
gra_207.ds4
Temperature - °C
1.00
1.05
1.15
1.20
1.30
1.35
1.40
-40
-15
10
35
60
85
I
F = 20 mA
1.25
1.10
Fig. 4
Spectral Bandwidth
gra_005.ds4
Wavelength - nm
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870
890
910
930
950
970
990
1010
Fig. 5
Coupling Characteristics
with SDP8406
gra_031.ds4
Lens-to-lens separation - inches
0.1
0.2
0.4
0.6
1.0
2
4
6
10
0.01
0.02
0.05
0.1
0.2
0.5
1.0
I
F = 20 mA
V
CE = 5V
T
A = 25 °C
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
42


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