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PCF85116-3 Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. PCF85116-3
Description  2048 x 8-bit CMOS EEPROM with I2C-bus interface
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PCF85116-3 Datasheet(HTML) 1 Page - NXP Semiconductors

 
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PCF85116-3
2048
× 8-bit CMOS EEPROM with I2C-bus interface
Rev. 04 — 25 October 2004
Product data
1.
Description
The PCF85116-3 is an 16 kbits (2048
× 8-bit) floating gate Electrically Erasable
Programmable Read Only Memory (EEPROM). By using redundant EEPROM cells it
is fault tolerant to single bit errors. In most cases multi bit errors are also covered.
This feature dramatically increases reliability compared to conventional EEPROM
memories. Power consumption is low due to the full CMOS technology used. The
programming voltage is generated on-chip, using a voltage multiplier.
As data bytes are received and transmitted via the serial I2C-bus, a package using
eight pins is sufficient. Only one PCF85116-3 device is required to support all eight
blocks of 256
× 8-bit each.
Timing of the E/W cycle is carried out internally, thus no external components are
required. A write-protection input at pin 7 (WP) allows disabling of write-commands
from the master by a hardware signal. When pin 7 is HIGH, data in the EEPROM are
protected. The data bytes received will not be acknowledged by the PCF85116-3 and
the EEPROM contents are not changed.
Remark: The PCF85116-3 is pin and address compatible to the PCx85xxC-2 family.
The PCF85116-3 covers the whole address space of 16 kbits; address inputs are no
longer needed. Therefore, pins 1 to 3 are not connected. The write-protection input
(WP) is on pin 7.
2.
Features
s Low power CMOS:
x maximum operating current 1.0 mA
x maximum standby current 10
µA (at 5.5 V), typical 4 µA
s Non-volatile storage of 16 kbits organized as eight blocks of 256
× 8-bit each
s Single supply with full operation down to 2.7 V
s On-chip voltage multiplier
s Serial input/output I2C-bus (100 kbit/s standard-mode and 400 kbit/s fast-mode)
s Write operations: multi byte write mode up to 32 bytes
s Write-protection input
s Read operations:
x sequential read
x random read
s Internal timer for writing (no external components)
s Power-on reset
s High reliability by using redundant EEPROM cells


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