Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

BYC10-600CT Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYC10-600CT
Description  Rectifier diode ultrafast, low switching loss
Download  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo 

BYC10-600CT Datasheet(HTML) 3 Page - NXP Semiconductors

   
Zoom Inzoom in Zoom Outzoom out
 3 / 6 page
background image
Philips Semiconductors
Product specification
Rectifier diode
BYC10-600CT
ultrafast, low switching loss
Fig.3. Maximum forward dissipation per diode as a
function of average forward current; rectangular
current waveform where I
F(AV) =IF(RMS) x √D.
Fig.4. Typical reverse recovery switching losses per
diode, as a function of rate of change of current dI
F/dt.
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time t
rr, per diode as a
function of rate of change of current dI
F/dt.
Fig.8. Typical peak reverse recovery current per
diode, I
rrm as a function of rate of change of current
dI
F/dt.
01
2345
678
0
5
10
15
D = 1.0
0.5
0.2
0.1
BYC5-600
Rs = 0.09 Ohms
Vo = 1.3 V
150
137.5
125
112.5
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) C
D =
tp
tp
T
T
t
I
time
ID
Irrm
VD
dIF/dt
ID = IL
losses due to
diode reverse recovery
100
1000
0
0.05
0.1
0.15
0.2
BYC5-600
f = 20 kHz
Rate of change of current, dIF/dt (A/us)
Diode reverse recovery switching losses, Pdsw (W)
IF = 5 A
10 A
7.5 A
Tj = 125 C
VR = 400 V
100
1000
10
100
BYC5-600
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
10 A
7.5 A
IF = 5 A
Tj = 125 C
VR = 400 V
100
1000
0
1
2
3
4
5
BYC5-600
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
f = 20 kHz
Tj = 125 C
VR = 400 V
IF = 5 A
7.5 A
10 A
100
1000
1
10
100
BYC5-600
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
IF = 5 A
10 A
October 1999
3
Rev 1.000


Html Pages

1  2  3  4  5  6 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
BSM200GAL120DLC62mm C-series module with low loss IGBT2 and EmCon diode 1 2 3 4 5 Moreeupec GmbH
MS906C3Low loss fast recovery diode 1 2 3 Fuji Electric
BAS16XV2T1Switching Diode 1 2 3 4 ON Semiconductor
DSM3MAGENERAL-USE RECTIFIER DIODE 1 2 3 Hitachi Semiconductor
BAV70DXV6T1Monolithic Dual Switching Diode Common Cathode 1 2 3 4 5 MoreON Semiconductor
STTH512Ultrafast recovery - 1200 V diode 1 2 3 4 5 MoreSTMicroelectronics
BAV70TT1Dual Switching Diode 1 2 3 4 5 MoreON Semiconductor
85EPSINPUT RECTIFIER DIODE 1 2 3 4 5 MoreInternational Rectifier
STTH3006Turbo 2 ultrafast high voltage rectifier 1 2 3 4 5 MoreSTMicroelectronics

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn