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BU2522DX Datasheet(PDF) 1 Page - NXP Semiconductors

Part # BU2522DX
Description  Silicon Diffused Power Transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2522DX Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
P
tot
Total power dissipation
T
hs ≤ 25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C = 6.0 A; IB = 1.2 A
-
5.0
V
I
Csat
Collector saturation current
f = 64 kHz
6
-
A
V
F
Diode forward voltage
I
F = 6.0 A
-
2.2
V
t
f
Fall time
I
Csat = 6.0 A; f = 64 kHz
0.12
0.25
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
I
B
Base current (DC)
-
6
A
I
BM
Base current peak value
-
9
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
150
mA
-I
BM
Reverse base current peak value
1
-6
A
P
tot
Total power dissipation
T
hs
25 ˚C
-
45
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
case
12 3
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 1.200


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