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HAT2160H Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAT2160H
Description  Silicon N Channel Power MOS FET Power Switching
Download  8 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HAT2160H Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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HAT2160H
Rev.3.00 Sep 26, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
20
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG = ±100
µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 20 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.8
2.3
V
VDS = 10 V, I D = 1 mA
RDS(on)
2.1
2.6
m
ID = 30 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
2.8
4.1
m
ID = 30 A, VGS = 4.5 V
Note4
Forward transfer admittance
|yfs|
78
130
S
ID = 30 A, VDS = 10 V
Note4
Input capacitance
Ciss
7750
pF
Output capacitance
Coss
1220
pF
Reverse transfer capacitance
Crss
450
pF
VDS = 10 V, VGS = 0, f = 1 MHz
Gate resistance
Rg
0.5
Total gate charge
Qg
54
nC
Gate to source charge
Qgs
19
nC
Gate to drain charge
Qgd
14
nC
VDD = 10 V, VGS = 4.5 V,
ID = 60 A
Turn-on delay time
td(on)
17
ns
Rise time
tr
60
ns
Turn-off delay time
td(off)
65
ns
Fall time
tf
15
ns
VGS = 10 V, ID = 30 A,
VDD
≅ 10 V, RL = 0.33 Ω,
Rg = 4.7
Body–drain diode forward voltage
VDF
0.82
1.07
V
IF = 60 A, VGS = 0
Note4
Body–drain diode reverse recovery
time
trr
40
ns
IF = 60 A, VGS = 0
diF/ dt = 100 A/
µs
Notes: 4. Pulse test


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