Electronic Components Datasheet Search |
|
BU2522A Datasheet(PDF) 3 Page - NXP Semiconductors |
|
BU2522A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A Fig.3. Switching times waveforms (64 kHz). Fig.4. Switching times definitions. Fig.5. Switching times test circuit. Fig.6. Test Circuit RBSOA. V CC = 140 V; -VBB = 4 V; L C = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH; C FB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A Fig.7. Typical DC current gain. h FE = f (IC) V CE = 5 V Fig.8. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB V I I end 16 us 6.5 us 5 us t t t TRANSISTOR DIODE CM B I C I B CE LB IBend -VBB LC T.U.T. VCC VCL CFB ICM 90 % 10 % tf ts IBend IC IB t t - IBM 0.01 0.1 1 10 100 IC / A BU2522A 100 10 1 h FE Tj = 25 C Tj = -40 C Tj = 85 C + 150 v nominal adjust for ICM Lc BY228 Cfb T.U.T. LB IBend -VBB 0.1 1 10 IC / A 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 VBESAT / V BU2522A Tj = 25 C Tj = 85 C IC/IB = 3 5 November 1995 3 Rev 1.100 |
Similar Part No. - BU2522A |
|
Similar Description - BU2522A |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |